Electronic Materials Enterprise / New TiW target

1. Objective
We would like to introduce our new TiW target aimed at low particle generation.

2. Method and Results
(1) Sputtering Target
* Impurities, Density
(2) Sputtering Test
* Sputtering Conditions
* Film Morphology ( by FESEM)
* Composition ( by EPMA) and XRD Pattern
* Dependences of Deposition Rate, Film Resistivity, Film Residual Stress and RMS of Film on Sputtering Pressure

3. Conclusion

2. Method and Results

(1) Sputtering Target
Typical Impurities of 10wt%TiW Targets (wt ppm)

Element	Na	K	Fe	Cu	Ni	Al
Analysis	FES		ICP	GF-AA
New	0.1	<0.1	5	<1	<1	3
Conventional	0.1	0.5	5	<1	1	1

Typical Density of 10wt%TiW Targets (g/cm³)

Type	Density (g/cm³)
New	14.3
Conventional	14.2

(2) Sputtering Test
Sputtering Test Conditions

Item	Condition
Machine	ULVAC SIH-450H
Sample Structure	TiW(300nm)/SiO₂(100nm)/Si wafer
Target	Conventional and New Type /6" W-10wt%Ti
Base pressure	<510^-5Pa
Gas pressure	0.2 ~ 3.0Pa
Power	3.68W/cm²
T-S distance	60mm

Film Morphology ( by FESEM)

New
Conventional
	2.0Pa	0.2Pa

Composition ( by EPMA) and XRD Pattern of TiW Films ( at 0.2Pa)

Type	Ti (wt%)
New	4.80
Conventional	4.85

Dependences of Deposition Rate, Film Resistivity, Film Residual Stress and RMS of Film on Sputtering Pressure

3. Conclusion

We would like to supply the New TiW target enhanced sintering condition and aimed at low particle generation.
The other properties of the film are equivalent to those of our conventional one. Thank you.

Summary

	Item	New vs. Conventional	Dependence of Sputtering Pressure(SP)
Target	Impurity, Density	New Conventional	-
Target	Microstructure (Sintering)	New Conventional	-
Film	Film Morphology	New Conventional	-
	Composition, Crystal Structure	New Conventional	-
	Deposition Rate	New Conventional	slightly increase with increasing SP.
	Resistivity	New Conventional	independent
	Compressiveb Stress	New Conventional	decrease with increasing SP.
	RMS	New Conventional	independent