Electronic Materials Enterprise / Chalcogenide target for optical recording media

Chalcogenide target for optical recording media

Chalcogenide targets are used for active layer of phase change recording media. All of these materials are refined by our company and our related company. Our sputtering targets are produced under total quality assurance system which is controlled from raw material to high purity resource. So we got the reputation of No.1 supplier of this field.
Phase change technology will be applied for new field in the future.
Our wide experience and new trial will contribute to the development of new composition system.

Basic specification

1. Composition tolerance : +/- 0.5at %
2. Typical impurity data (GeSbTe)

element	Ag	Cu	Bi	Fe	Si	Mg	O
content (ppm)	< 1	< 1	< 1	1	< 5	< 1	240

3. Relative density : max 95 ~ 100%
4. Maximum size : max

300mm

Projection of GeSbTe liquid phase (by Bor)

Grain structure
GeSbTe target
Another supplier's target	Our target (Low oxygen and fine grain)
AgInSbTe target
Our old type	Our new target (High density and fine grain)

Research and evaluation of recording material by simulation calculation

We suggest the best film composition which can get the optimum disk quality by calculating the formation frequency of crystal core and the crystal growth speed. We are developing the recording composition which has the optimum characteristics for each disk. We aim to become to be best partner of media field as a material supplier.

Sample of simulation results ( direct over-write)		Rewritable results
		Good
		No good
Recording Mark for initialized disk	After first rewriting

Example of simulation ( Dependence for film temperature of crystallization)
Marking (Amorphous formation)	Erase

Example of simulation (Reflection change during laser irradiation)